| PART |
Description |
Maker |
| HM514400B HM514400BL HM514400C HM514400CL HM514400 |
1,048,576-word x 4-bit dynamic random access memory, 80ns
1,048,576-word x 4-bit dynamic random access memory, 60ns
1/048/576-word X 4-bit Dynamic Random Access Memory
1,048,576-word x 4-bit dynamic random access memory, 70ns
|
Hitachi Semiconductor
|
| IDT70825L20G IDT70825L35G IDT70825L45G IDT70825S45 |
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?
Cabinet Rack Front Panel RoHS Compliant: Yes 8K X 16 STANDARD SRAM, 20 ns, PQFP80
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 45 ns, CPGA84
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 35 ns, PQFP80
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 45 ns, PQFP80
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 20 ns, CPGA84
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM)
|
SRAM
Integrated Device Technology, Inc.
|
| HEF4720 HEF4720B HEF4720BD HEF4720BF HEF4720BN HEF |
256-bit/ 1-bit per word random access memories
256-bit, 1-bit per word random access memories
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| 74F219PC 74F219SJ 74F219 74F219SC 74F219CW 74F219S |
64-Bit Random Access Memory with 3-STATE Outputs
|
FAIRCHILD[Fairchild Semiconductor]
|
| MB8132E-H |
32,768-BIT DYNAMIC RANDOM ACCESS MEMORY
|
Fujitsu
|
| MCM101524 MCM101524B12 MCM101524B15 |
1M x 4 Bit Fast Static Random Access Memory with ECL I/O
|
MOTOROLA[Motorola, Inc]
|
| MCM101525 MCM101525B12 MCM101525B15 |
2M x 2 Bit Fast Static Random Access Memory with ECL I/O
|
MOTOROLA[Motorola, Inc]
|
| K1S3216B1C K1S3216B1C-I |
2Mx16 bit Uni-Transistor Random Access Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HM472114-3 HM472114-4 HM472114P-3 |
1024-wordX4-bit Static Random Access Memory
|
Hitachi Semiconductor
|
| K1S161611A-I DS_K1S161611A K1S161611A DSK1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AK63264Z AK63264W |
65,536 x 32 Bit CMOS/BiCMOS Static Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
